Jeong-Hoon Oh, K. Ryoo, Sunghun Jung, Kyung Seok Oh, Hyungcheol Shin, Byung-Gook Park
{"title":"Effects of aluminum layer and oxidation on TiO2 based bipolar resistive random access memory (RRAM)","authors":"Jeong-Hoon Oh, K. Ryoo, Sunghun Jung, Kyung Seok Oh, Hyungcheol Shin, Byung-Gook Park","doi":"10.1109/SNW.2010.5562545","DOIUrl":null,"url":null,"abstract":"The effects of Al layer and plasma oxidation amount on TiO2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO2/Ir structure, VRESET is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"42 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The effects of Al layer and plasma oxidation amount on TiO2 based bipolar RRAM cell are investigated, respectively. In Ir/Al/TiO2/Ir structure, VRESET is slightly lowered and the current ratio is increased. In case of plasma oxidation effect, the device which experienced short-time plasma oxidation has low set/reset voltages and high current and resistance ratios. These results are commonly thought to be induced by more oxygen vacancies.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
