Bruce B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, Michael A. Gribelyuk, E. C. Jones, R. J. Miller, Hon-Sum Philip Wong, Wilfried Haensch
{"title":"Extreme scaling with ultra-thin Si channel MOSFETs","authors":"Bruce B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, Michael A. Gribelyuk, E. C. Jones, R. J. Miller, Hon-Sum Philip Wong, Wilfried Haensch","doi":"10.1109/IEDM.2002.1175829","DOIUrl":null,"url":null,"abstract":"We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thin Si channels.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"1 1","pages":"267-270"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"191","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 191
Abstract
We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thin Si channels.
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