Effect of bandgap of EBL on efficiency of the p-n homojunction Si solar cell from numerical analysis

Md. Feroz Ali, Md. Faruk Hossain
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引用次数: 6

Abstract

In this work, p-n homojunction Silicon solar cell with Electron Blocking Layer (EBL) on the top of the surface has been simulated and investigated by using Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator in respect to overall performance. By changing the thickness of the p-layer and n-layer Si and bandgap of the EBL the optimum performance and efficiency has been investigated. After completing the simulation all data from AMPS-1D has been transfer to the gragh.exe (graph plotting software) software to plot most of the graph in this paper. At the thickness of 6000 nm of each p-layer and n-layer Si and 50 nm of EBL with 2.10 eV bandgap the efficiency of 26.285% has been investigated and this type of solar cell has been proposed in this paper.
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EBL带隙对p-n均结硅太阳电池效率的影响
本文利用微电子和光子结构分析(AMPS-1D)模拟器对表面上有电子阻挡层(EBL)的p-n同质结硅太阳电池的整体性能进行了模拟和研究。通过改变p层和n层硅的厚度和带隙,研究了EBL的最佳性能和效率。仿真完成后,将AMPS-1D的所有数据传输到graph .exe(绘图软件)软件中,绘制本文的大部分图形。在p层硅和n层硅厚度为6000 nm、带隙为2.10 eV的EBL厚度为50 nm时,研究了26.285%的效率,并提出了这种类型的太阳能电池。
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