Ka-band 2.3W power AlGaN/GaN heterojunction FET

Abstract

Describes the first successful watt-level Ka-band power operation of an AlGaN/GaN heterojunction FET fabricated on a SiC substrate. Taking the advantage of high breakdown voltage, high-current, and high-gain characteristics of the short-channel GaN-based FET, state-of-the-art high-power performance of >2W has been achieved at 30GHz from a single chip having a gate width of 0.36mm. The developed device with a gate length of 0.25/spl mu/m exhibited a linear gain of 8.8dB at 30GHz, indicating that the short-channel AlGaN/GaN FET is promising for a variety of high-power applications at Ka-band and above.