Decreasing of Quantity of Radiation De-Fects in Implanted-Junction Heterorec-Tifiers by Using Overlayers

Abstract

Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing of radiation defects to decrease quantity of radiation defects.