Decreasing of Quantity of Radiation De-Fects in Implanted-Junction Heterorec-Tifiers by Using Overlayers

E. Pankratov, E. Bulaeva
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Abstract

Recently we introduced an approach to increase sharpness of diffusion-junction and implanted-junction heterorectifiers. The heterorectifiers could by single and as a part of heterobipolar transistors. However manufacturing p-n-junctions by ion implantation leads to generation of radiation defects in materials of heterostructure. In this paper we introduce an approach to use an overlayer and optimization of annealing of radiation defects to decrease quantity of radiation defects.
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用覆盖层降低植入结异质二极管中辐射缺陷的数量
最近我们介绍了一种提高扩散结和植入结异质整流器锐度的方法。异质整流器可以单独使用,也可以作为异质双极晶体管的一部分。然而,通过离子注入制造p-n结会导致异质结构材料产生辐射缺陷。本文介绍了一种利用辐射缺陷的覆盖层和优化退火来减少辐射缺陷数量的方法。
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International Journal of Computer Science and Applications
International Journal of Computer Science and Applications Computer Science-Computer Science Applications
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期刊介绍: IJCSA is an international forum for scientists and engineers involved in computer science and its applications to publish high quality and refereed papers. Papers reporting original research and innovative applications from all parts of the world are welcome. Papers for publication in the IJCSA are selected through rigorous peer review to ensure originality, timeliness, relevance, and readability.
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