{"title":"Amorphous silicon solar cells produced by a DC magnetron glow discharge technique","authors":"D.R. McKenzie , G.B. Smith","doi":"10.1016/0378-5963(85)90221-1","DOIUrl":null,"url":null,"abstract":"<div><p>The production of amorphous silicon solar cells using deposition from a DC magnetron glow discharge is described. The cells have the p-i-n structure with indium tin oxide front contacts. Fill factors of 40% and overall solar efficiencies of around 1.2% were obtained. Investigations were carried out to determine the reasons for deficiencies in the carrier collection efficiency. The cell efficiency was increased by increasing the μτ product of the i-layer. The spectral dependences of carrier collection efficiency, open circuit voltage and fill factors were determined. Comparison with published theoretical models of similar cells showed that for the best cells, surface recombination effects limited the efficiency. Argon used in the p-layer deposition was the most likely cause of these effects.</p></div>","PeriodicalId":100105,"journal":{"name":"Applications of Surface Science","volume":"22 ","pages":"Pages 891-898"},"PeriodicalIF":0.0000,"publicationDate":"1985-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0378-5963(85)90221-1","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applications of Surface Science","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0378596385902211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The production of amorphous silicon solar cells using deposition from a DC magnetron glow discharge is described. The cells have the p-i-n structure with indium tin oxide front contacts. Fill factors of 40% and overall solar efficiencies of around 1.2% were obtained. Investigations were carried out to determine the reasons for deficiencies in the carrier collection efficiency. The cell efficiency was increased by increasing the μτ product of the i-layer. The spectral dependences of carrier collection efficiency, open circuit voltage and fill factors were determined. Comparison with published theoretical models of similar cells showed that for the best cells, surface recombination effects limited the efficiency. Argon used in the p-layer deposition was the most likely cause of these effects.