Pratchayaporn Singhanath, A. Suadet, Arnon Kanjanop, Thawatchai Thongleam, Sanya Kuankid, V. Kasemsuwan
{"title":"Low voltage adjustable CMOS Schmitt trigger","authors":"Pratchayaporn Singhanath, A. Suadet, Arnon Kanjanop, Thawatchai Thongleam, Sanya Kuankid, V. Kasemsuwan","doi":"10.1109/ICMSAO.2011.5775531","DOIUrl":null,"url":null,"abstract":"This paper presents a low voltage adjustable CMOS Schmitt trigger using dynamic threshold MOS (DTMOS). Cross-coupled inverter with body control is employed to speed up the switching process, and control the intensity of the feedback. The proposed Schmitt trigger has been designed using 0.18 μm 0.4 V CMOS technology and analyzed using PSPICE with BSIM3V3 device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages for both low-to-high (VT(LH)) and high-to-low (VT(HL)) as high as 15 % of the supply voltage. The power dissipation is 0.13 μW.","PeriodicalId":6383,"journal":{"name":"2011 Fourth International Conference on Modeling, Simulation and Applied Optimization","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Fourth International Conference on Modeling, Simulation and Applied Optimization","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMSAO.2011.5775531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
This paper presents a low voltage adjustable CMOS Schmitt trigger using dynamic threshold MOS (DTMOS). Cross-coupled inverter with body control is employed to speed up the switching process, and control the intensity of the feedback. The proposed Schmitt trigger has been designed using 0.18 μm 0.4 V CMOS technology and analyzed using PSPICE with BSIM3V3 device models. The simulation results show rail-to-rail operation and independently adjustable switching voltages for both low-to-high (VT(LH)) and high-to-low (VT(HL)) as high as 15 % of the supply voltage. The power dissipation is 0.13 μW.
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