{"title":"A CBLM Approach to the Electronic Structure of Transition Metal Impurities in Silicon","authors":"S. Wilke, J. Masek, B. Velicky","doi":"10.1002/PSSB.2221330249","DOIUrl":null,"url":null,"abstract":"La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium","PeriodicalId":10913,"journal":{"name":"Day 1 Wed, February 23, 2022","volume":"321 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"1986-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Day 1 Wed, February 23, 2022","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/PSSB.2221330249","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
La structure electronique de ces elements dans Si est decrite par une methode parametrisee de reseau de Bethe d'amas a liaisons fortes. Cette methode est basee sur la description explicite d'un amas representant un site interstitiel tetraedrique typique du silicium
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