Logic gates and memory elements design and simulation using PMOS organic transistor

Abstract

Multi-flngered OTFTs, with staggered top-gate configuration have been fabricated on flexible polyethylene-naphtalate (PEN) substrates (100 μm thick). Inkjet printing technique has been used to setup the silver contacts, while the organic layers and the dielectric fluoropolymer have been deposited by spin-coating. The p-type polymeric semiconductor is a solution processed 6,13-bis(triisopropyl-silyletynyl) pentacene. The semiconductor layer thickness is about 30 nm, while the dielectric fluoropolymer is 400 nm thick. These transistors have been characterized and a DC, and a transient accurate models have been developed and imported in CADENCE. Finally, SPECTRE has been used to simulate model circuits based on such a device. In this work we describe the design of high frequency logic gates and preliminary flip-flops design, exploiting PMOS organic transistor and its expected performances.