{"title":"EUV LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING AND NANOFABRICATION","authors":"H. Kinoshita","doi":"10.1142/S0219607707000219","DOIUrl":null,"url":null,"abstract":"EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).","PeriodicalId":80753,"journal":{"name":"Bulletin - Cosmos Club. Cosmos Club (Washington, D.C.)","volume":"29 1","pages":"51-77"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bulletin - Cosmos Club. Cosmos Club (Washington, D.C.)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/S0219607707000219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
EUV lithography is the exposure technology in which even 15 nm node which is the limit of Si device can be achieved. Unlike the conventional optical lithography, this technology serves as a reflection type optical system, and a multilayer coated mirror is used. Development of manufacturing equipment is accelerated to aim at the utilization starting from 2011. The critical issues of development are the EUV light source which has the power over 115 W and resist with high sensitivity and low line edge roughness (LER).
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