Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications

IF 1.3 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Ferroelectrics Letters Section Pub Date : 2019-12-03 DOI:10.1080/07315171.2019.1668682
R. K. Jha, P. Singh, M. Goswami, B. R. Singh
{"title":"Integration of Sr0.8Bi2.2Ta2O9/HfO2 ferroelectric/dielectric composite film on Si substrate for nonvolatile memory applications","authors":"R. K. Jha, P. Singh, M. Goswami, B. R. Singh","doi":"10.1080/07315171.2019.1668682","DOIUrl":null,"url":null,"abstract":"Abstract Sr0.8Bi2.2Ta2O9 (SBT) ferroelectric and HfO2 dielectric layers were successively deposited onto the p-type (100) Si substrate via RF sputtering. Metal-Ferroelectric-Insulator-Silicon (MFIS) capacitors were fabricated with 200 nm SBT and 10 nm HfO2 film shows the improved memory window of 1.811 V as compared to the 1.27 V in Metal-Ferroelectric-Silicon (MFS) structures. Improvement in leakage current and breakdown voltage was also observed in the MFIS structures as compared to the MFS structures. Degradation of ferroelectric polarization was not pronounced even after applying 8 × 1012 bipolar cycles in MF(200nm)I(10nm)S structures and the device shows significant data retention time of more than 2.5 hours.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2019-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2019.1668682","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 3

Abstract

Abstract Sr0.8Bi2.2Ta2O9 (SBT) ferroelectric and HfO2 dielectric layers were successively deposited onto the p-type (100) Si substrate via RF sputtering. Metal-Ferroelectric-Insulator-Silicon (MFIS) capacitors were fabricated with 200 nm SBT and 10 nm HfO2 film shows the improved memory window of 1.811 V as compared to the 1.27 V in Metal-Ferroelectric-Silicon (MFS) structures. Improvement in leakage current and breakdown voltage was also observed in the MFIS structures as compared to the MFS structures. Degradation of ferroelectric polarization was not pronounced even after applying 8 × 1012 bipolar cycles in MF(200nm)I(10nm)S structures and the device shows significant data retention time of more than 2.5 hours.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Sr0.8Bi2.2Ta2O9/HfO2铁电/介电复合薄膜在Si衬底上的集成,用于非易失性存储器
采用射频溅射的方法在p型(100)Si衬底上制备了Sr0.8Bi2.2Ta2O9 (SBT)铁电层和HfO2介电层。采用200 nm的SBT制备金属-铁电-绝缘体-硅(MFIS)电容器,10 nm的HfO2薄膜显示,与金属-铁电-硅(MFS)结构的1.27 V相比,记忆窗口提高了1.811 V。与MFS结构相比,MFIS结构的泄漏电流和击穿电压也有所改善。即使在MF(200nm)I(10nm)S结构中施加8 × 1012双极循环,铁电极化也没有明显的退化,并且器件的数据保留时间超过2.5小时。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Ferroelectrics Letters Section
Ferroelectrics Letters Section 物理-物理:凝聚态物理
CiteScore
1.10
自引率
0.00%
发文量
1
审稿时长
4.8 months
期刊介绍: Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals. Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.
期刊最新文献
From NdNiO2 to a Mott Multiferroic BiNiO2 Effects of high contents of dielectric inclusions on ferroelectricity in dielectric-ferroelectric nanocomposites with dimethylammonium aluminum sulfate hexahydrate Optical analysis of RE3+ (re = Sm, Dy): MgLa2V2O9 phosphors Design and Characterization of Eu2+/Ln3+ Co-doped SrAl2Si2O8 Photostimulated Phosphors for Optical Information Storages First Principles Study of Electron Structure of LaxBa1-xMnO3 Crystals
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1