Understanding Grain Growth Mechanism in Vacuum Evaporated CdTe Thin Films by Different Halide Treatments: An Evolution of Ion Size Impact on Physical Properties for Solar Cell Applications

IF 3.8 3区 化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR Comments on Inorganic Chemistry Pub Date : 2022-11-25 DOI:10.1080/02603594.2022.2142938
Suman Kumari, D. Suthar, Himanshu, N. Kumari, M. Dhaka
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引用次数: 7

Abstract

ABSTRACT In the present study, detailed investigation on postdeposition halides treatment using CdCl2, CdI2, MgF2, MgCl2 and MgI2 is undertaken over thermally evaporated CdTe films. As-deposited films are subjected to halide treatment and subsequent annealing at 385°C. Halide activation induced grain growth mechanism is presented along with anions and cations roles on change in films properties and formation of different complexes. XRD patterns of all CdTe thin films exhibited polycrystalline nature with preferential cubic phased (310) plane except for CdI2 treated films where preferred reflection is appeared corresponding to (220) plane. Grain growth is observed with treatment employing amicable estimation tools. All films have a conspicuous ohmic character owing to linear I–V plots. Optical study reveals that CdCl2 treated CdTe films have higher absorbance and optical energy band-gap is measured out in the range 1.42–1.53 eV with halide treatment. Surface topography and PL study revealed to variations in surface roughness and photoluminescence peaks intensity with halide treatments. Film growth and treatment are validated by EDS analysis and FESEM images demonstrated explicit grain growth. Findings warrant amazing role of halide activation on film properties and CdCl2 is found a suitable surface treatment agent to CdTe films in order to develop better devices. Graphical abstract
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了解不同卤化物处理真空蒸发CdTe薄膜的晶粒生长机制:离子尺寸对太阳能电池物理性能影响的演变
在本研究中,采用CdCl2, CdI2, MgF2, MgCl2和MgI2在热蒸发CdTe薄膜上进行沉积后卤化物处理的详细研究。沉积薄膜在385℃下进行卤化物处理和退火。提出了卤化物活化诱导晶粒生长的机理,以及阴离子和阳离子在薄膜性能变化和不同配合物形成中的作用。除CdI2处理过的薄膜在(220)面出现优先反射外,所有CdTe薄膜的XRD谱图均表现出以立方相(310)面为主的多晶性质。用友好的估计工具观察晶粒生长。所有的电影都有明显的欧姆特征,因为线性的I-V情节。光学研究表明,经CdCl2处理的CdTe薄膜具有较高的吸光度,经卤化物处理后的能带在1.42 ~ 1.53 eV范围内。表面形貌和PL研究揭示了卤化物处理后表面粗糙度和光致发光峰强度的变化。EDS分析证实了薄膜的生长和处理,FESEM图像显示了明显的晶粒生长。研究结果证明了卤化物活化对薄膜性能的惊人作用,并发现CdCl2是一种适合CdTe薄膜的表面处理剂,从而开发出更好的器件。图形抽象
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来源期刊
Comments on Inorganic Chemistry
Comments on Inorganic Chemistry 化学-无机化学与核化学
CiteScore
9.00
自引率
1.90%
发文量
18
审稿时长
>12 weeks
期刊介绍: Comments on Inorganic Chemistry is intended as a vehicle for authoritatively written critical discussions of inorganic chemistry research. We publish focused articles of any length that critique or comment upon new concepts, or which introduce new interpretations or developments of long-standing concepts. “Comments” may contain critical discussions of previously published work, or original research that critiques existing concepts or introduces novel concepts. Through the medium of “comments,” the Editors encourage authors in any area of inorganic chemistry - synthesis, structure, spectroscopy, kinetics and mechanisms, theory - to write about their interests in a manner that is both personal and pedagogical. Comments is an excellent platform for younger inorganic chemists whose research is not yet widely known to describe their work, and add to the spectrum of Comments’ author profiles, which includes many well-established inorganic chemists.
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