Self‐repairable, high‐uniform conductive‐bridge random access memory based on amorphous NbSe2

Abstract

Conductive‐bridge random access memory (CBRAM) emerges as a promising candidate for next‐generation memory and storage device. However, CBRAMs are prone to degenerate and fail during electrochemical metallization processes. To address this issue, herein we propose a self‐repairability strategy for CBRAMs. Amorphous NbSe2 was designed as the resistive switching layer, with Cu and Au as the top and bottom electrodes, respectively. The NbSe2 CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity, with forming‐free and compliance current‐free resistive switching characteristics, low‐operation voltage, and competitive endurance and retention performance. Most importantly, the self‐repairable behavior is discovered for the first time in CBRAM. The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage. The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe2 switching layer has been revealed by a designed broken‐down point approach, which is responsible for the self‐repairable behavior of NbSe2 CBRAMs. Our self‐repairable and high‐uniform amorphous NbSe2 CBRAM may open the door to the development of memory and storage devices in the future.