{"title":"Modification of Interfacial Properties of Organic Device in Presence of Single Walled Carbon Nanotubes","authors":"Sudipta Sen, Pallabi Das, N. Manik","doi":"10.52687/2348-8956/915","DOIUrl":null,"url":null,"abstract":"Device performance gets significantly affected by the interfacial properties Schottky barrier and width of space – charge region have been estimated without and with SWCNT. Rose Bengal dye has been sandwiched in between Indium Tin Oxide (ITO) coated glass substrate and Aluminium. Schottky barrier is estimated by perusing steady state current has also been considered to calculate the effective barrier in presence of externally applied electric field. Space- charge region width is interrelated to the both Schot be inferred that by incorporating SWCNT, schottky barrier and space which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed to the lowering of energy of traps which has also been determined in this work. Device performance gets significantly affected by the interfacial properties of the device. In this work, charge region have been estimated without and with SWCNT. Rose Bengal dye has been sandwiched in between Indium Tin Oxide (ITO) coated glass substrate and Aluminium. imated by perusing steady state current – voltage plot. Image barrier lowering effect has also been considered to calculate the effective barrier in presence of externally applied electric field. charge region width is interrelated to the both Schottky barrier and the applied electric field. It can be inferred that by incorporating SWCNT, schottky barrier and space- charge region width get reduced which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed to the lowering of energy of traps which has also been determined in this work. considered to calculate the effective barrier in presence of electric tky barrier and the applied electric field. It can charge region width get reduced which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed","PeriodicalId":39426,"journal":{"name":"International Journal of Computational Materials Science and Surface Engineering","volume":"41 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Computational Materials Science and Surface Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.52687/2348-8956/915","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
Device performance gets significantly affected by the interfacial properties Schottky barrier and width of space – charge region have been estimated without and with SWCNT. Rose Bengal dye has been sandwiched in between Indium Tin Oxide (ITO) coated glass substrate and Aluminium. Schottky barrier is estimated by perusing steady state current has also been considered to calculate the effective barrier in presence of externally applied electric field. Space- charge region width is interrelated to the both Schot be inferred that by incorporating SWCNT, schottky barrier and space which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed to the lowering of energy of traps which has also been determined in this work. Device performance gets significantly affected by the interfacial properties of the device. In this work, charge region have been estimated without and with SWCNT. Rose Bengal dye has been sandwiched in between Indium Tin Oxide (ITO) coated glass substrate and Aluminium. imated by perusing steady state current – voltage plot. Image barrier lowering effect has also been considered to calculate the effective barrier in presence of externally applied electric field. charge region width is interrelated to the both Schottky barrier and the applied electric field. It can be inferred that by incorporating SWCNT, schottky barrier and space- charge region width get reduced which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed to the lowering of energy of traps which has also been determined in this work. considered to calculate the effective barrier in presence of electric tky barrier and the applied electric field. It can charge region width get reduced which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed
期刊介绍:
IJCMSSE is a refereed international journal that aims to provide a blend of theoretical and applied study of computational materials science and surface engineering. The scope of IJCMSSE original scientific papers that describe computer methods of modelling, simulation, and prediction for designing materials and structures at all length scales. The Editors-in-Chief of IJCMSSE encourage the submission of fundamental and interdisciplinary contributions on materials science and engineering, surface engineering and computational methods of modelling, simulation, and prediction. Papers published in IJCMSSE involve the solution of current problems, in which it is necessary to apply computational materials science and surface engineering methods for solving relevant engineering problems.