Structural And Supercapacitive Performance Of V2O5 Thin Films Prepared By DC Magnetron Sputtering

G. Sandhya, M. Dhananjaya, N. Guru-Prakash, A. Lakshmi-Narayana, P. Rosaiah, O. Hussain
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引用次数: 2

Abstract

Nanocrystalline V2O5 thin films were deposited by dc-magnetron sputtering at various substrate temperatures keeping O2 to Ar ratio at 1:8. The microstructural features were studied by XRD and Raman measurements while the surface topography and grain size of the films by AFM. The films deposited at 250 ̊C exhibited predominant (001) orientation representing the orthorhombic crystal structure with Pmmn space group. The observation of well resolved vanadyle mode at 993 cm -1 and very strong vibrational mode at 142cm -1 in Raman spectrum confirms the formation of layered like structure. The surface of the film is comprised of nanocrystallites with an average grain size of 32 nm and surface roughness of 14 nm. The V2O5 thin films deposited on Ni substrates exhibited good electrochemical performance with high specific capacitance of 238 F/g current density of 1 mAcm -2 with good cycling stability.
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直流磁控溅射制备V2O5薄膜的结构和超电容性能
采用直流磁控溅射技术,在不同衬底温度下,保持O2 / Ar比为1:8,制备了纳米V2O5薄膜。通过XRD和Raman测试研究了薄膜的微观结构特征,并用AFM测试了薄膜的表面形貌和晶粒尺寸。在250℃下沉积的薄膜表现出优势取向(001),具有Pmmn空间群的正交晶型结构。在拉曼光谱中观察到在993 cm -1处有很好的解析vanadyle模式和在142cm -1处有很强的振动模式,证实了层状结构的形成。薄膜表面由纳米晶组成,平均晶粒尺寸为32 nm,表面粗糙度为14 nm。在Ni衬底上沉积的V2O5薄膜具有良好的电化学性能,比电容高达238 F/g,电流密度为1 mAcm -2,具有良好的循环稳定性。
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