Intragranular defects in As-deposited and cadmium chloride-treated polycrystalline cadmium telluride solar cells

T. Fiducia, A. Abbas, K. Barth, W. Sampath, M. Walls
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引用次数: 6

Abstract

Atomic-scale defects limit the open circuit Voltage, and the conversion efficiency of thin film polycrystalline cadmium telluride solar cells. Using state of the art aberration-corrected high resolution transmission electron microscopy, the type, density and atomic structure of intragranular defects present in cadmium chloride treated and untreated CdTe has been established. The cadmium chloride activation process dramatically reduces defect density but faults do remain. Characterizing the defects in both materials is an essential first step to determining their potential electrical effects, and to understanding how the cadmium chloride treatment reduces their density. Improving our knowledge of the mechanisms involved can lead to further process improvements.
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砷沉积和氯化镉处理多晶碲化镉太阳能电池的晶内缺陷
原子尺度的缺陷限制了薄膜型多晶碲化镉太阳能电池的开路电压和转换效率。利用最先进的像差校正高分辨率透射电子显微镜,建立了氯化镉处理和未处理的CdTe中存在的颗粒内缺陷的类型,密度和原子结构。氯化镉活化过程大大降低了缺陷密度,但缺陷仍然存在。表征这两种材料的缺陷是确定其潜在电效应和了解氯化镉处理如何降低其密度的重要的第一步。提高我们对相关机制的了解可以导致进一步的过程改进。
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