Verwendung von Metalloxyd-Schichten mit Plasmakontakt zur Energiewandlung

Abstract

The photovoltaic effect in oxide layers on so-called valve metalls (Al, Ta, Zr, etc.) can be used on principle also for the direct conversion of energy from radioactive particles (α and β) into electrical energy. It can be expected that the resistivity of these oxide layers against radiation damages because of their usually amorphous structure is higher compared with p-n junctions in monocrystalline semiconductors. Since the photovoltaic effect in these oxide layers is not connected with a metallic (or electrolytic) sandwich contacting it is proposed to use an ionized gas as counter electrode, this gas being possibly ionized by radiactive radiation itself. This method was qualitatively investigated by β-irradiation (Tritium) of Ta₂O₅-layers produced by anodizing.