{"title":"A low time complexity defect-tolerance algorithm for nanoelectronic crossbar","authors":"Bo Yuan, Bin Li","doi":"10.1109/ICIST.2011.5765228","DOIUrl":null,"url":null,"abstract":"Emerging nanoelectronic technologies are expected to extend the conventional integrated circuits beyond CMOS. However, the bottom-up self-assembly fabrication process of nanoelectronic devices results in higher defect density. Thus, crafted defect-tolerance techniques are urgently needed. In this paper, we present a low time complexity algorithm for application-independent defect-tolerance of nanoelectronic crossbars. The algorithm improves the performance through mixing the key ideas from two state-of-the-art algorithms. The algorithm offers similar (above 90%) defect-free subcrossbar sizes compared to the current best algorithm as the results show over a set of samples with various crossbar sizes and defect densities, but the time complexity is reduced from O(n3) down to O(n2). Thus, our algorithm is more suitable for defect-tolerance of reconfigurable nanoelectronic crossbar due to the per-chip basis.","PeriodicalId":6408,"journal":{"name":"2009 International Conference on Environmental Science and Information Application Technology","volume":"29 1","pages":"143-148"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Environmental Science and Information Application Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIST.2011.5765228","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
Emerging nanoelectronic technologies are expected to extend the conventional integrated circuits beyond CMOS. However, the bottom-up self-assembly fabrication process of nanoelectronic devices results in higher defect density. Thus, crafted defect-tolerance techniques are urgently needed. In this paper, we present a low time complexity algorithm for application-independent defect-tolerance of nanoelectronic crossbars. The algorithm improves the performance through mixing the key ideas from two state-of-the-art algorithms. The algorithm offers similar (above 90%) defect-free subcrossbar sizes compared to the current best algorithm as the results show over a set of samples with various crossbar sizes and defect densities, but the time complexity is reduced from O(n3) down to O(n2). Thus, our algorithm is more suitable for defect-tolerance of reconfigurable nanoelectronic crossbar due to the per-chip basis.