R. Dietz, M. Gerhard, J. Boettcher, H. Kuenzel, M. Koch, B. Sartorius, M. Schell
{"title":"Photoconductive THz generation at 1.5 μm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers","authors":"R. Dietz, M. Gerhard, J. Boettcher, H. Kuenzel, M. Koch, B. Sartorius, M. Schell","doi":"10.1109/IRMMW-THZ.2011.6104831","DOIUrl":null,"url":null,"abstract":"We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.","PeriodicalId":6353,"journal":{"name":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","volume":"78 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Conference on Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRMMW-THZ.2011.6104831","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.
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