{"title":"Nonplanar focal plane with silicon based photodetector","authors":"Zhao Ma, Xiaochen Wang, H. Cho, Kyle Renshaw","doi":"10.1109/IPCON.2017.8116004","DOIUrl":null,"url":null,"abstract":"A fabrication process is demonstrated to form curved image sensors based on CMOS image sensor technology. A stretchable polymer backplane is fabricated monolithically on the backside of the wafer before a DRIE etch is performed to segment the wafer and make the circuit stretchable.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"19 1","pages":"55-56"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Photonics Conference (IPC) Part II","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPCON.2017.8116004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A fabrication process is demonstrated to form curved image sensors based on CMOS image sensor technology. A stretchable polymer backplane is fabricated monolithically on the backside of the wafer before a DRIE etch is performed to segment the wafer and make the circuit stretchable.
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