Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films

arXiv: Materials Science Pub Date : 2020-11-07 DOI:10.1063/5.0036837

Shingo Kaneta-Takada, Y. Wakabayashi, Y. Krockenberger, S. Ohya, Masaaki Tanaka, Y. Taniyasu, Hideki Yamamoto

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引用次数: 19

Abstract

The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a {\pi} Berry phase, were observed in films with thicknesses as small as 10 nm. Residual resistivity increased with decreasing film thickness, indicating disorder near the interface between SrRuO3 and the SrTiO3 substrate. Since this disorder affects the magnetic and electrical properties of the films, the Curie temperature decreases and the coercive field increases with decreasing thickness. Thickness-dependent magnetotransport measurements revealed that the threshold residual resistivity ratio (RRR) to observe Weyl fermion transport is 21. These results provide guidelines for realizing quantum transport of Weyl fermions in SrRuO3 near heterointerfaces.

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超高质量SrRuO3薄膜中Weyl费米子的厚度相关量子输运

最近在流动的四维铁磁钙钛矿SrRuO3中观察到的Weyl费米子指出，这种材料是探索外延异质结构中一对Weyl节点相关的新物理的良好平台。在这封信中，我们报告了在优化条件下在SrTiO3衬底上生长的超高质量外延SrRuO3薄膜的厚度依赖磁输运特性。Weyl费米子输运的特征，即不饱和线性正磁电阻伴随着具有{\pi} Berry相的量子振荡，在厚度仅为10 nm的薄膜中被观察到。残余电阻率随薄膜厚度的减小而增大，表明SrRuO3与SrTiO3衬底界面附近存在无序现象。由于这种无序性影响了薄膜的磁性和电学性能，因此随着厚度的减小，居里温度降低，矫顽力场增大。厚度相关磁输运测量结果表明，观测Weyl费米子输运的阈值残余电阻率比(RRR)为21。这些结果为在SrRuO3异质界面附近实现Weyl费米子的量子输运提供了指导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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arXiv: Materials Science

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