Drain-accelerated degradation of tunnel oxides in Flash memories

A. Chimenton, A. Spinelli, D. Ielmini, A. Lacaita, A. Visconti, P. Olivo
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引用次数: 17

Abstract

A new technique for separating the oxide damage due to program/erase (P/E) cycling and of parasitic hot-hole injection due to bitline biasing in Flash memories is presented. The technique is based on an analysis of the spatial distribution of anomalous tail cells in the array subjected to P/E cycling. We show that electron and hole injection have different dependences on the number of P/E cycles, with the latter becoming the dominating mechanism for large cycling.
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快闪记忆体中隧道氧化物的漏极加速降解
提出了一种分离闪存中由程序/擦除(P/E)循环引起的氧化物损伤和由位线偏置引起的寄生热孔注入的新技术。该技术是基于对阵列中受到P/E循环的异常尾细胞的空间分布的分析。我们发现电子注入和空穴注入对P/E循环次数有不同的依赖,后者成为大循环的主导机制。
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