Magnetic behaviour in amorphous TbxCu1−x alloys (x = 0.18, 0.22, 0.33, 0.50 and 0.65)

B. Boucher, M. Sanquer, R. Tourbot, P. Chieux, P. Convert, M. Maret, J. Bigot
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引用次数: 7

Abstract

The results of susceptibility, magnetization and small-angle neutron scattering measurement for 4 K < T < 300 K are discussed. In all cases the magnetization is distributed in an inhomogeneous way either inside isolated bubbles or within the interbubble spaces. The terbium-poor alloys present a usual hysteresis loop contrary to the terbium-rich alloys for which the applied field plays an important role in establishing the moment order. The order established in a high field (H ≈ 3.6 × 106 A m−1) is preserved when this field decreases or is reversed. Polishing increases the volume of the magnetic domains within the sample and orients the moments at the surface perpendicular to the polishing direction.

The magnetic susceptibility in a 1.6 × 105 A m−1 field and the isothermal magnetization (H ⩽ 3.6 × 106 A m−1) for each alloy have been measured for 4 K < T < 300 K; the magnetic properties are discussed in terms of the nuclear and magnetic medium-range order as determined by small-angle neutron scattering; the measurements were done at the Institut Laue Langevin, with the D 11 spectrometer. The samples were prepared by sputtering and also, for x = 0.65, by planar flow casting. In both cases the samples are in the form of sheets 40 μm thick and 1 cm wide. For sample x = 0.65 (planar flow casting), both faces were polished with fine sandpaper along a chosen direction and then measured.

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非晶TbxCu1−x合金(x = 0.18, 0.22, 0.33, 0.50和0.65)的磁性行为
4k <的磁化率、磁化率和小角中子散射测量结果T & lt;讨论了300k。在所有情况下,无论是在孤立的气泡内还是在气泡间空间内,磁化都以不均匀的方式分布。贫铽合金的磁滞回线与富铽合金的磁滞回线相反,在富铽合金的磁滞回线中,磁场对磁滞回线的建立起着重要的作用。在高场(H≈3.6 × 106 a m−1)中建立的顺序在高场减小或反转时保持不变。抛光增加了样品内磁畴的体积,并使表面上垂直于抛光方向的力矩定向。测定了各合金在1.6 × 105 a m−1磁场中的磁化率和4 K <下的等温磁化强度(H≥3.6 × 106 a m−1);T & lt;300 K;根据中子小角散射确定的核和磁中程顺序讨论了磁性;测量是在朗格万研究所用d11光谱仪完成的。样品采用溅射法制备,当x = 0.65时,采用平面流铸法制备。在这两种情况下,样品都是40 μm厚,1厘米宽的薄片。对于样品x = 0.65(平面流铸),用细砂纸沿着选定的方向抛光两个表面,然后测量。
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