G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner
{"title":"Next generation pressure sensors in surface micromachining technology","authors":"G. Lammel, S. Armbruster, C. Schelling, H. Benzel, J. Brasas, M. Illing, R. Gampp, V. Senz, F. Schafer, S. Finkbeiner","doi":"10.1109/SENSOR.2005.1496352","DOIUrl":null,"url":null,"abstract":"One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.","PeriodicalId":22359,"journal":{"name":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","volume":"24 1","pages":"35-36 Vol. 1"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2005.1496352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
One of the first MEMS products - the pressure sensor - has still room for innovation. We report a completely new pressure sensor generation based on a novel surface micromachining technology. Using porous silicon the membrane fabrication can be monolithically integrated with high synergy in an analog/digital semiconductor process suited for high volume production in an IC-fabrication facility. Only two mask layers and one electrochemical etching step are inserted at the beginning of a standard IC-process to transform the epitaxial silicon layer from the electronic process into a monocrystalline membrane with a vacuum cavity under it.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
