Electronic structure of delafossite-type metallic oxide PdCoO2 : Special Issue on Structure and Electronic Properties in the Pseudogap Systems

M. Hasegawa, T. Higuchi, Masayuki Tanaka, T. Tsukamoto, Shik Shin, H. Takei
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引用次数: 12

Abstract

The electronic structure of metallic oxide PdCoO 2 has been investigated by photoemission and inverse photoemission spectroscopies. It is found that the finite density of states at the Fermi level in the spectra is observed at the low photon energy where the ionization cross-section of Pd 4d increases with decreasing photon energy. Resonant photoemission spectra of PdCoO 2 at photon energies near the Co 3p to 3d and Pd 4p to 4d absorption thresholds, indicate no density of states at the Fermi level in the partial density of states of Co 3d, and finite density of states at the Fermi level in the partial density of states of Pd 4d, respectively. These results indicate that the main contribution to the density of states at the Fermi level is Pd 4d and that the low resistivity of PdCoO 2 is attributable to the itinerancy of the Pd 4d electrons.
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delafoite型金属氧化物PdCoO2的电子结构:赝隙体系结构与电子性能特刊
利用光发射光谱和逆光发射光谱研究了金属氧化物pdco_2的电子结构。发现在低光子能量下,光谱中存在有限的费米能级态密度,pd4d的电离截面随着光子能量的降低而增大。在Co 3p ~ 3d和Pd 4p ~ 4d吸收阈值附近的光子能量下,PdCoO 2的共振光发射光谱分别表明在Co 3d的部分态密度中没有费米能级态密度,在Pd 4d的部分态密度中有有限的费米能级态密度。这些结果表明,pdco_2在费米能级上的态密度的主要贡献是pd4d, pdco_2的低电阻率归因于pd4d电子的流变性。
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