{"title":"Power devices current monitoring using horizontal and vertical magnetic force sensor","authors":"M. Donoval, M. Daricek, J. Marek, V. Stopjaková","doi":"10.1109/DDECS.2009.5012111","DOIUrl":null,"url":null,"abstract":"Power devices current sensors based on magnetic force of is presented. The proposed sensors are aimed to be used for switched current testing in power devices with high switched currents above amperes. The advantage of the proposed monitors is in elimination of the undesired voltage reduction and compatibility with the power device control electronics. Description of horizontal and novel vertical magnetic sensors architectures, designs and physical implementations on chip are presented. Several sensor versions were designed in 1.0 µm BiCMOS technology.","PeriodicalId":6325,"journal":{"name":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 12th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2009.5012111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Power devices current sensors based on magnetic force of is presented. The proposed sensors are aimed to be used for switched current testing in power devices with high switched currents above amperes. The advantage of the proposed monitors is in elimination of the undesired voltage reduction and compatibility with the power device control electronics. Description of horizontal and novel vertical magnetic sensors architectures, designs and physical implementations on chip are presented. Several sensor versions were designed in 1.0 µm BiCMOS technology.
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