I. Repins, L. Mansfield, A. Kanevce, S. Jensen, D. Kuciauskas, Stephen Glynn, T. Barnes, W. Metzger, J. Burst, Chunsheng Jiang, P. Dippo, S. Harvey, G. Teeter, C. Perkins, B. Egaas, A. Zakutayev, Jan-Hendrik Alsmeier, Thomas Lusky, L. Korte, R. Wilks, M. Bar, Yanfa Yan, S. Lany, P. Zawadzki, Ji-Sang Park, S. Wei
{"title":"Wild band edges: The role of bandgap grading and band-edge fluctuations in high-efficiency chalcogenide devices","authors":"I. Repins, L. Mansfield, A. Kanevce, S. Jensen, D. Kuciauskas, Stephen Glynn, T. Barnes, W. Metzger, J. Burst, Chunsheng Jiang, P. Dippo, S. Harvey, G. Teeter, C. Perkins, B. Egaas, A. Zakutayev, Jan-Hendrik Alsmeier, Thomas Lusky, L. Korte, R. Wilks, M. Bar, Yanfa Yan, S. Lany, P. Zawadzki, Ji-Sang Park, S. Wei","doi":"10.1109/PVSC.2016.7749600","DOIUrl":null,"url":null,"abstract":"Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"28 1","pages":"0309-0314"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2016.7749600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.
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