Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition

IF 2.4 3区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI:10.1116/6.0001607
B. Ge, D. Ohori, Yi-Ho Chen, T. Ozaki, K. Endo, Yiming Li, J. Tarng, S. Samukawa
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引用次数: 6
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中性束增强原子层沉积法生长室温高品质HfO2/SiO2栅极堆叠薄膜
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来源期刊
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A 工程技术-材料科学:膜
CiteScore
5.10
自引率
10.30%
发文量
247
审稿时长
2.1 months
期刊介绍: Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.
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