Tribological properties of hydrogenated boron carbide (BxC:Hy) thin films on stainless steel deposited by RF-PECVD technique

IF 0.9 4区 物理与天体物理 Q4 PHYSICS, APPLIED European Physical Journal-applied Physics Pub Date : 2020-08-01 DOI:10.1051/epjap/2020190323
A. Bute, Neelima Khare, Sanjiv Kumar, D. Bhattacharya, Kulwant Singh, A. Sahu, N. Chand, S. Sinha
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引用次数: 1

Abstract

This study narrates the findings regarding investigation of tribological properties of Bx C:Hy thin films deposited by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique. To study tribological properties, two sets of films were prepared with variation in composition and thickness by tuning deposition parameters. Tribological properties were studied in ambience for three different applied vertical load values (5, 10 and 15 N). Lower self-bias (−75 V) seems advantageous for synthesis of Bx C:Hy films offering superior hardness, lubricity and wear resistance in tribologically stressed conditions. For a given composition, the film with the highest thickness (∼3 μm) exhibited better friction and wear resistance, offering lowest co-efficient of friction (COF) ∼0.23 for 5 N load and specific wear rate of 2.56 × 10−5 mm3 /Nm for 10 N load. Lower self-bias during deposition (−75 V) seems advantageous for synthesis of Bx C:Hy films having high hardness (∼2800 HK) and excellent Co-efficient of friction (COF).
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RF-PECVD沉积不锈钢表面氢化碳化硼(BxC:Hy)薄膜的摩擦学性能
本文叙述了射频等离子体增强化学气相沉积(RF-PECVD)技术沉积Bx C:Hy薄膜摩擦学性能的研究结果。为了研究其摩擦学性能,通过调整沉积参数制备了两组不同成分和厚度的薄膜。在环境中研究了三种不同的垂直载荷值(5、10和15 N)下的摩擦学性能。较低的自偏置(- 75 V)似乎有利于合成Bx C:Hy薄膜,在摩擦应力条件下具有优异的硬度、润滑性和耐磨性。对于给定的成分,厚度最高(~ 3 μm)的薄膜具有更好的摩擦和耐磨性,在5 N负载下具有最低的摩擦系数(COF) ~ 0.23,在10 N负载下具有2.56 × 10−5 mm3 /Nm的比磨损率。沉积过程中较低的自偏置(−75 V)似乎有利于合成具有高硬度(~ 2800 HK)和优异摩擦系数(COF)的Bx C:Hy薄膜。
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来源期刊
CiteScore
1.90
自引率
10.00%
发文量
84
审稿时长
1.9 months
期刊介绍: EPJ AP an international journal devoted to the promotion of the recent progresses in all fields of applied physics. The articles published in EPJ AP span the whole spectrum of applied physics research.
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