The development of high-speed III-nitride based light-emitting diode for visible light and plastic optical fiber communications

Jin-Wei Shi, J. Sheu
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Abstract

We review our work on GaN high-speed LEDs. By optimizing MQWs structure in our device, record-high data rates (5.5 Gbit/sec) over POF among all visible LEDs can be achieved. Besides, a high-lumens, high-CRI (95), and high-speed white-light LED has been demonstrated for indoor VLC.
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用于可见光和塑料光纤通信的高速iii -氮化物基发光二极管的研制
我们回顾了GaN高速led的研究进展。通过优化器件中的mqw结构,可以在所有可见led之间的POF上实现创纪录的高数据速率(5.5 Gbit/sec)。此外,还演示了用于室内VLC的高流明,高显色指数(95)和高速白光LED。
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