Electron energy spectrum of the spherical GaAs/AlxGa1-xAs quantum dot with several impurities on the surface

Abstract

The model of a spherical quantum dot with several donor impurities on its surface is suggested. The electron energy spectra are studied as a function of the quantum dot radius and the number of impurities. Several cases of the location of impurities on the quantum dot surface are considered. The plane wave functions method has been applied to calculate the electron energy spectrum. The splitting of electron energy levels is analyzed in the cases of different number of impurities. It is shown that the electron energy splitting depends on both the number of impurities on the surface and on their location. The electron binding energy is defined too.