Efficient halide-based perovskite optoelectronic devices using conjugated polyelectrolytes

M. Song
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Abstract

Halide-based perovskite materials have been spotlighted in light-emitting diodes and perovskite solar cells applications due to their excellent optical and electrical characteristics. In particular, excellent film quality of perovskite with defect passivation is required to obtain highly efficient and stable perovskite optoelectronic devices. However, lots of undesired trap sites by defect sites such as voids, pinholes, grain boundaries and under-coordinated ions in surface of film can be formed in solution-processed perovskite films, reducing the device performance and operational stability of perovskite devices. Here, we demonstrate efficient perovskite optoelectronic devices by incorporating poly(fluorene-phenylene)-based anionic conjugated polyelectrolytes (CPEs).
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使用共轭聚电解质的高效卤化物钙钛矿光电器件
卤化物基钙钛矿材料由于其优异的光学和电学特性,在发光二极管和钙钛矿太阳能电池中得到了广泛的应用。特别是,要获得高效稳定的钙钛矿光电器件,需要具有缺陷钝化的钙钛矿具有优异的薄膜质量。然而,溶液法制备的钙钛矿薄膜会在薄膜表面形成空洞、针孔、晶界和欠配位离子等缺陷位点,从而形成大量不需要的陷阱位点,降低了钙钛矿器件的性能和运行稳定性。在这里,我们展示了高效的钙钛矿光电器件,结合聚(芴-苯)基阴离子共轭聚电解质(cpe)。
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