Stephen C. Richardson, J. Woods, Jake Daykin, J. Gorecki, R. Bek, N. Klokkou, James S. Wilkinson, M. Jetter, V. Apostolopoulos
{"title":"III-V compound semiconductor membrane quantum well waveguide lasers emitting at 1 μm","authors":"Stephen C. Richardson, J. Woods, Jake Daykin, J. Gorecki, R. Bek, N. Klokkou, James S. Wilkinson, M. Jetter, V. Apostolopoulos","doi":"10.1051/epjconf/202226601011","DOIUrl":null,"url":null,"abstract":"We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.","PeriodicalId":11731,"journal":{"name":"EPJ Web of Conferences","volume":"44 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EPJ Web of Conferences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1051/epjconf/202226601011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate epitaxially grown semiconductor membrane quantum well lasers on a SiO2/Si substrate lasing in a waveguide configuration, for potential uses as coherent light sources compatible with photonic integrated circuits. We study the emission characteristics of In0.13Ga0.87As/GaAs0.94P0.06 quantum well lasers, by using real and reciprocal space imaging. The laser cavity length is 424 μm, it emits light at 1 μm, and lasing thresholds as low as 211 mW were recorded. Control over the position and size of the laser spots by the pump was demonstrated.
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