Simulation and Comparison of Voltage and Current Characteristics of Novel Finfet by Varying its Oxide Thickness with Single Gate Mosfet for Improved Conductivity

Abstract

Aim: The current and voltage characteristics of FinFET and single gate MOSFET are simulated by varying their oxide thickness ranging from 2 nm to 20 nm. Materials and Methods: The electrical conductance of FINFET (n= 320) was compared with MOSFET (n=320) by varying oxide thickness ranging from 2 nm to 20 nm in the NANO HUB tool simulation environment. Results: FINFET has significantly higher conductance (2.66*10-4 mho P<0.05) than single gate MOSFET (1.64*10-4 mho). The optimal thickness for maximum conductivity was 2nm for FINFET, and 2 nm for MOSFET. Conclusion: Within the limits of this study, FINFET with oxide thickness of 2 nm offers the best conductivity.