B. Chen, B. Gao, S. W. Sheng, L.F. Liu, X.Y. Liu, Y.S. Chen, Y. Wang, J. Kang, B. Yu
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引用次数: 0
Abstract
Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle in scaled RRAM devices.
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