D. Ding, S. Johnson, Jiang-Bo Wang, Shui-Qing Yu, Yong-Hang Zhang
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引用次数: 0
Abstract
The spontaneous emission quantum efficiency of molecular beam epitaxy grown InGaAs/GaAs quantum wells is determined using photoluminescence measurements. The quantum efficiency is inferred from the power law that links pump power and integrated photoluminescence signal.
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