{"title":"Theoretical characterization of hole mobility in N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine","authors":"Hongze Gao","doi":"10.1016/j.theochem.2010.09.018","DOIUrl":null,"url":null,"abstract":"<div><p>Density-functional theory (DFT) and Marcus charge transport theory were employed to investigate the hole transport property of <em>N</em>,<em>N</em>′-diphenyl-<em>N</em>,<em>N</em>′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) which is a prototype of good hole-transporting materials. Using an incoherent transport model we calculated its hole mobility (<em>μ</em>). Both reorganization energy and electronic coupling, especially the electronic couplings are considered and calculated in detail. The factors influencing its electronic coupling are revealed. It has high hole transport efficiency (<em>μ</em> <!-->=<!--> <!-->1.26<!--> <!-->×<!--> <!-->10<sup>−2</sup> <!-->cm<sup>2</sup>/(V<!--> <!-->s)) and the reason was explained in terms of the spatial extent of the frontier orbitals.</p></div>","PeriodicalId":16419,"journal":{"name":"Journal of Molecular Structure-theochem","volume":"962 1","pages":"Pages 80-84"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.theochem.2010.09.018","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Molecular Structure-theochem","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0166128010005890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Density-functional theory (DFT) and Marcus charge transport theory were employed to investigate the hole transport property of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) which is a prototype of good hole-transporting materials. Using an incoherent transport model we calculated its hole mobility (μ). Both reorganization energy and electronic coupling, especially the electronic couplings are considered and calculated in detail. The factors influencing its electronic coupling are revealed. It has high hole transport efficiency (μ = 1.26 × 10−2 cm2/(V s)) and the reason was explained in terms of the spatial extent of the frontier orbitals.