Low loss K-band tunable bandpass filter using micromachined variable capacitors

Jong-Man Kim, Sanghyo Lee, Jaehyoung Park, Jung-Mu Kim, C. Baek, Y. Kwon, Yong-Kweon Kim
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引用次数: 16

Abstract

In this paper, a low loss K-band tunable bandpass filter with micromachined variable capacitors has been designed and fabricated, and its electrical performance has been measured. All elements of the tunable filter were fabricated using a surface micromachining technology and subsequent releasing process. The fabricated chip size was 2.75 mm/spl times/1 mm. The measured initial center frequency was 20.7 GHz with a low insertion loss of 2.2 dB. In the analog operating region of the capacitor, the center frequency could be tuned from 20.7 to 18 GHz, which means a tuning-ratio of 13%. The maximum analog-mode capacitance ratio is 1.31 with an actuation voltage of 35 V. With a bias voltage of 60 V, the membrane collapsed to the bottom electrode and the center frequency was changed to 15.5 GHz, thus the tuning ratio is 25%. In this case, the capacitance ratio was calculated to be 1.9.
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采用微机械可变电容的低损耗k波段可调谐带通滤波器
本文设计并制作了一种低损耗的k波段可调谐带通滤波器,并对其电性能进行了测试。可调滤波器的所有元件都采用表面微加工技术和随后的释放过程制造。制得的芯片尺寸为2.75 mm/ sp1次/1 mm。测量的初始中心频率为20.7 GHz,插入损耗低至2.2 dB。在电容的模拟工作区内,中心频率可以从20.7 GHz调谐到18 GHz,即调谐比为13%。当驱动电压为35v时,最大模拟模电容比为1.31。当偏置电压为60 V时,膜坍缩至底电极,中心频率变为15.5 GHz,调谐比为25%。在这种情况下,电容比计算为1.9。
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