G. Luka, D. Volyniuk, A. Tomkeviciene, J. Simokaitiene, J. Gražulevičius, P. Stakhira, V. Cherpak, P. Sybilski, B. Witkowski, M. Godlewski, E. Guziewicz, Z. Hotra, O. Hotra
{"title":"ZnMgO:Al Anode layer for organic light emitting diode based on carbazole derivative","authors":"G. Luka, D. Volyniuk, A. Tomkeviciene, J. Simokaitiene, J. Gražulevičius, P. Stakhira, V. Cherpak, P. Sybilski, B. Witkowski, M. Godlewski, E. Guziewicz, Z. Hotra, O. Hotra","doi":"10.1109/OMEE.2012.6464854","DOIUrl":null,"url":null,"abstract":"We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10−3 Ωcm. The UV OLED device turns on at the applied voltage of 9 V.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"26 1","pages":"37-38"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEE.2012.6464854","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate the fabrication and properties of an near ultraviolet organic light emitting diode (UV OLED) that contains 2,7-di(9-carbazolyl)-9-(2-ethylhexyl)carbazole organic emitting layer and aluminumdoped magnesium zinc oxide (ZnMgO:Al) layer as transparent electrode. The obtained ZnMgO:Al layer is transparent for the wavelengths longer than 325 nm and has low resistivity of the order of 10−3 Ωcm. The UV OLED device turns on at the applied voltage of 9 V.
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