F. Ye, W. Deng, Wangwu Guo, Ruimin Liu, Daming Chen, Yifeng Chen, Yang Yang, N. Yuan, Jianning Ding, Zhiqiang Feng, P. Altermatt, P. Verlinden
{"title":"22.13% Efficient industrial p-type mono PERC solar cell","authors":"F. Ye, W. Deng, Wangwu Guo, Ruimin Liu, Daming Chen, Yifeng Chen, Yang Yang, N. Yuan, Jianning Ding, Zhiqiang Feng, P. Altermatt, P. Verlinden","doi":"10.1109/PVSC.2016.7750289","DOIUrl":null,"url":null,"abstract":"Passivated emitter and rear cells (PERC) on p-type monocrystalline Si wafers are currently being introduced to mass production by various manufacturers and have been widely researched. We describe and characterize our recent batch of PERC cells, fabricated on 156×156 mm2 wafers with an industrial process sequence and industrial equipment. The champion cell has an efficiency of 22.13% and a Voc of 680.3mV, confirmed by FrauhoferCalLab, and is the first world record to exceed 22% in the category of industrial-type large-area mono PERC cells with printed front and rear contacts. The improved surface passivation and optimized doping profile have reduced the saturation currents of the heavily and lightly doped emitter parts to 111 fA/cm2 and 26.3 fA/cm2, respectively, which are the main contributions to the cell efficiency improvements.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"22 1","pages":"3360-3365"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2016.7750289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38
Abstract
Passivated emitter and rear cells (PERC) on p-type monocrystalline Si wafers are currently being introduced to mass production by various manufacturers and have been widely researched. We describe and characterize our recent batch of PERC cells, fabricated on 156×156 mm2 wafers with an industrial process sequence and industrial equipment. The champion cell has an efficiency of 22.13% and a Voc of 680.3mV, confirmed by FrauhoferCalLab, and is the first world record to exceed 22% in the category of industrial-type large-area mono PERC cells with printed front and rear contacts. The improved surface passivation and optimized doping profile have reduced the saturation currents of the heavily and lightly doped emitter parts to 111 fA/cm2 and 26.3 fA/cm2, respectively, which are the main contributions to the cell efficiency improvements.
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