Broadband and Polarization Insensitive Surface Optical Coupler using Vertically Curved Waveguides Fabricated with ArF-Immersion Lithography

Tomoya Yoshida, Y. Atsumi, E. Omoda, Y. Sakakibara
{"title":"Broadband and Polarization Insensitive Surface Optical Coupler using Vertically Curved Waveguides Fabricated with ArF-Immersion Lithography","authors":"Tomoya Yoshida, Y. Atsumi, E. Omoda, Y. Sakakibara","doi":"10.1364/OFC.2019.TU2J.7","DOIUrl":null,"url":null,"abstract":"Vertically-curved Si waveguide fabricated using 45nm-node ArF-immersion lithography and ion implantation bending method showed <2.5dB minimum coupling loss, >130nm/0.5dB spectrum bandwidth for 5μm-MFD fiber coupling in both TE- and TM-polarization with very small polarization dependence.","PeriodicalId":6704,"journal":{"name":"2019 Optical Fiber Communications Conference and Exhibition (OFC)","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Optical Fiber Communications Conference and Exhibition (OFC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/OFC.2019.TU2J.7","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Vertically-curved Si waveguide fabricated using 45nm-node ArF-immersion lithography and ion implantation bending method showed <2.5dB minimum coupling loss, >130nm/0.5dB spectrum bandwidth for 5μm-MFD fiber coupling in both TE- and TM-polarization with very small polarization dependence.
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用arf浸没光刻技术制造垂直弯曲波导的宽带和偏振不敏感表面光耦合器
采用45nm节点arf浸没光刻和离子注入弯曲方法制备的垂直弯曲Si波导在5μm-MFD光纤耦合下,在TE偏振和tm偏振下的频谱带宽均为130nm/0.5dB,偏振依赖性很小。
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