Memory mapped ECC: low-cost error protection for last level caches

D. Yoon, M. Erez
{"title":"Memory mapped ECC: low-cost error protection for last level caches","authors":"D. Yoon, M. Erez","doi":"10.1145/1555754.1555771","DOIUrl":null,"url":null,"abstract":"This paper presents a novel technique, Memory Mapped ECC, which reduces the cost of providing error correction for SRAM caches. It is important to limit such overheads as processor resources become constrained and error propensity increases. The continuing decrease in SRAM cell size and the growing capacity of caches increases the likelihood of errors in SRAM arrays. To address this, redundant information can be used to correct a value after an error occurs. Information redundancy is typically provided through error-correcting codes (ECC), which append bits to every SRAM row and increase the array's area and energy consumption. We make three observations regarding error protection and utilize them in our architecture: (1) much of the data in a cache is replicated throughout the hierarchy and is inherently redundant; (2) error-detection is necessary for every cache access and is cheaper than error correction, which is very infrequent; (3) redundant information for correction need not be stored in high-cost SRAM. Our unique architecture only dedicates SRAM for error detection while the ECC bits are stored within the memory hierarchy as data. We associate a physical memory address with each cache line for ECC storage and rely on locality to minimize the impact. The cache is dynamically and transparently partitioned between data and ECC with the fraction of ECC growing with the number of dirty cache lines. We show that this has little impact on both performance (1.3% average and < 4%) and memory traffic (3%) across a range of memory-intensive applications.","PeriodicalId":91388,"journal":{"name":"Proceedings. International Symposium on Computer Architecture","volume":"38 2 1","pages":"116-127"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"140","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. International Symposium on Computer Architecture","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1555754.1555771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 140

Abstract

This paper presents a novel technique, Memory Mapped ECC, which reduces the cost of providing error correction for SRAM caches. It is important to limit such overheads as processor resources become constrained and error propensity increases. The continuing decrease in SRAM cell size and the growing capacity of caches increases the likelihood of errors in SRAM arrays. To address this, redundant information can be used to correct a value after an error occurs. Information redundancy is typically provided through error-correcting codes (ECC), which append bits to every SRAM row and increase the array's area and energy consumption. We make three observations regarding error protection and utilize them in our architecture: (1) much of the data in a cache is replicated throughout the hierarchy and is inherently redundant; (2) error-detection is necessary for every cache access and is cheaper than error correction, which is very infrequent; (3) redundant information for correction need not be stored in high-cost SRAM. Our unique architecture only dedicates SRAM for error detection while the ECC bits are stored within the memory hierarchy as data. We associate a physical memory address with each cache line for ECC storage and rely on locality to minimize the impact. The cache is dynamically and transparently partitioned between data and ECC with the fraction of ECC growing with the number of dirty cache lines. We show that this has little impact on both performance (1.3% average and < 4%) and memory traffic (3%) across a range of memory-intensive applications.
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内存映射ECC:低成本错误保护的最后一级缓存
本文提出了一种新的技术,内存映射ECC,它降低了为SRAM高速缓存提供纠错的成本。随着处理器资源的限制和错误倾向的增加,限制这些开销是很重要的。SRAM单元尺寸的持续减小和缓存容量的不断增长增加了SRAM阵列出错的可能性。为了解决这个问题,可以使用冗余信息在错误发生后纠正值。信息冗余通常通过纠错码(ECC)提供,纠错码向SRAM的每一行附加位,增加了阵列的面积和能耗。关于错误保护,我们做了三个观察,并在我们的体系结构中利用它们:(1)缓存中的大部分数据在整个层次结构中被复制,并且本质上是冗余的;(2)错误检测对于每次缓存访问都是必要的,并且比错误纠正更便宜,错误纠正很少发生;(3)校正的冗余信息不需要存储在高成本的SRAM中。我们独特的架构只将SRAM用于错误检测,而ECC位作为数据存储在内存层次结构中。我们将物理内存地址与ECC存储的每个缓存线关联起来,并依靠局部性来最小化影响。缓存在数据和ECC之间动态透明地进行分区,ECC的比例随着脏缓存线数量的增加而增加。我们表明,在一系列内存密集型应用程序中,这对性能(平均1.3%和< 4%)和内存流量(3%)的影响很小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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ISCA '22: The 49th Annual International Symposium on Computer Architecture, New York, New York, USA, June 18 - 22, 2022 Special-purpose and future architectures Computer memory systems Basics of the central processing unit FRONT MATTER
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