Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

A. Khadir, N. Sengouga, M. K. Abdelhafidi
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引用次数: 1

Abstract

Abstract The effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.
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高速硅锗异质结双极晶体管的锗梯度优化
摘要研究了锗梯形轮廓形状对硅锗异质结双极晶体管(HBTs)直流电流增益(βF)、截止频率(fT)和最大振荡频率(fMAX)的影响。采用SILVACO技术计算机辅助设计(T-CAD)模拟器中的能量平衡(EB)、水动力(HD)和漂移扩散(DD)物理输运模型。结果表明,能量平衡模型的电流增益值高于水动力模型,且远高于漂移扩散模型。在HD和EB模型中,减小锗梯度向集电极侧的斜率可以提高最大振荡频率,而在DD模型中则保持稳定。
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