Hema Chandra Rao Bitra, A. Rao, K. S. Babu, G. N. Rao
{"title":"Low temperature investigation on dielectric properties of carbon doped copper oxide","authors":"Hema Chandra Rao Bitra, A. Rao, K. S. Babu, G. N. Rao","doi":"10.1080/07315171.2021.1923120","DOIUrl":null,"url":null,"abstract":"Abstract Carbon-doped copper oxide (CuO)1 -x C x (x = 0, 0.05 and 0.1) samples were synthesized by solid state reaction method, and sintered at 850 °C for 12 h. An X-ray diffraction (XRD) result shows that the structure of the samples was monoclinic. Dielectric studies were carried for these samples in the temperature range 80 K − 300 K between the frequency range 20 Hz − 1 MHz via impedance analyzer. The permittivity and tangent loss values of the doped samples increase with increasing doping concentration. In AC conductivity study, the conductivity mechanism of the 0% and 10% carbon doped samples follows correlated barrier hopping (CBH) model and 5% carbon doped sample follows quantum mechanical tunnelling (QMT) model. The temperature-dependent conductivity curve seems to obey the Arrhenius behavior. The activation energy values have been calculated from the frequency-dependent conductivity curves. The cole–cole plot shows the formation of grain and grain boundary in the samples.","PeriodicalId":50451,"journal":{"name":"Ferroelectrics Letters Section","volume":"32 1","pages":"46 - 55"},"PeriodicalIF":1.3000,"publicationDate":"2021-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ferroelectrics Letters Section","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1080/07315171.2021.1923120","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 1
Abstract
Abstract Carbon-doped copper oxide (CuO)1 -x C x (x = 0, 0.05 and 0.1) samples were synthesized by solid state reaction method, and sintered at 850 °C for 12 h. An X-ray diffraction (XRD) result shows that the structure of the samples was monoclinic. Dielectric studies were carried for these samples in the temperature range 80 K − 300 K between the frequency range 20 Hz − 1 MHz via impedance analyzer. The permittivity and tangent loss values of the doped samples increase with increasing doping concentration. In AC conductivity study, the conductivity mechanism of the 0% and 10% carbon doped samples follows correlated barrier hopping (CBH) model and 5% carbon doped sample follows quantum mechanical tunnelling (QMT) model. The temperature-dependent conductivity curve seems to obey the Arrhenius behavior. The activation energy values have been calculated from the frequency-dependent conductivity curves. The cole–cole plot shows the formation of grain and grain boundary in the samples.
期刊介绍:
Ferroelectrics Letters is a separately published section of the international journal Ferroelectrics. Both sections publish theoretical, experimental and applied papers on ferroelectrics and related materials, including ferroelastics, ferroelectric ferromagnetics, electrooptics, piezoelectrics, pyroelectrics, nonlinear dielectrics, polymers and liquid crystals.
Ferroelectrics Letters permits the rapid publication of important, quality, short original papers on the theory, synthesis, properties and applications of ferroelectrics and related materials.