Steady-state thermal analysis of an integrated 160 GHz balanced quadrupler based on quasi-vertical Schottky diodes

S. Nadri, Linli Xie, Naser Alijabbari, J. Gaskins, B. Foley, P. Hopkins, R. Weikle
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引用次数: 4

Abstract

This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum anode temperature of 64.9°C was found from the simulation. The addition of an extra beam lead connected to the block, for heat sinking, was found to reduce this maximum temperature to 41.0°C.
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基于准垂直肖特基二极管的集成160 GHz平衡四极器稳态热分析
本文报道了基于准垂直变容肖特基二极管工艺的160 GHz平衡四倍器的稳态热分析,用于高功率应用。通过三维有限元法求解芯片的热方程,对芯片进行了分析。时域热反射(TDTR)用于测量模型中不同材料的导热系数。模拟结果表明,阳极温度最高可达64.9℃。增加一个额外的梁引线连接到块,用于散热,被发现将最高温度降低到41.0°C。
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