Influence of the Physical Properties on the Antibacterial and Photocatalytic Behavior of Ag-Doped Indium Sulfide Film Deposited by Spray Pyrolysis

B. Tiss, Y. Moualhi, N. Bouguila, M. Kraini, S. Alaya, C. Croitoru, I. Ghiuta, D. Cristea, D. Pătroi, C. Moura, L. Cunha
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引用次数: 5

Abstract

Spray pyrolysis was used to deposit indium sulfide (In2S3) films, with or without silver doping. The films are polycrystalline, and the inclusion of Ag in the In2S3 structure leads to the formation of a solid solution, with the crystallite size of the order of tens of nanometers. In2S3 films exhibit a semiconductive behavior, and the incorporation of Ag leads to an increase of the charge carrier concentration, enhancing the electrical conductivity of the films. The small polaron hopping mechanism, deduced by the fittings according to the double Jonscher variation, explains the evolution of the direct current (dc) conductivity at high temperature of the Ag-doped indium sulfide. From impedance spectroscopy, it was found that the doped film presents dielectric relaxation, and Nyquist diagrams indicate the importance of the grain and the grain boundaries’ contributions to the transport phenomena. The physical characteristics of the films have an influence on the photocatalytic performance, achieving photodegradation efficiency above 80% (85.5% in the case of Ag doping), and on the antibacterial activity. The obtained results indicate that indium sulfide films are good candidates for environmental and biological applications, confirming a multifunctional nature.
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物理性质对喷雾热解法制备掺银硫化铟薄膜抑菌和光催化性能的影响
采用喷雾热解法沉积含银或不含银的硫化铟(In2S3)薄膜。薄膜呈多晶状,在In2S3结构中加入Ag形成固溶体,晶粒尺寸约为几十纳米。In2S3薄膜表现出半导体性质,银的掺入导致载流子浓度的增加,提高了薄膜的导电性。根据双Jonscher变分,推导出极化子小跳变机制,解释了ag掺杂硫化铟在高温下直流电导率的演化。阻抗谱分析发现,掺杂薄膜呈现介电弛豫现象,Nyquist图表明了晶粒和晶界对输运现象的贡献。膜的物理特性对光催化性能有影响,光降解效率达到80%以上(Ag掺杂时达到85.5%),并对抗菌活性有影响。所得结果表明,硫化铟薄膜具有良好的环境和生物应用前景,证实了其多功能性质。
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