High Temperature Metallisation for GaAs Device Processing

Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada... Pub Date : 1988-12-16 DOI:10.1002/PSSA.2211100226

D. Morgan, H. Thomas, W. Anderson, P. Thompson, A. Christou, D. Diskett

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引用次数: 5

Abstract

A study is made of the thermal stability of a range of refractory metals and their silicides on GaAs. Particular emphasis is laid on the effects of transient annealing with temperatures up to 1050 °C. Using the technique of Rutherford backscattering the results for the metallisation systems Ta, W, TaSix, WSix, and VSix are compared and indicate the superior properties of the refractory silicides. Die thermische Stabilitat einer Reihe von schwer schmelzbaren Metallen und ihrer Silizide auf GaAs wird untersucht. Insbesondere die Einflusse von nichtstationarer Temperung bei Temperaturen bis zu 1050 °C. Mit der Rutherfordruckstreutechnik werden die Ergebnisse fur die Metallisationssysteme Ta, W, TaSix, WSix und VSix verglichen und zeigen die uberlegenen Eigenschaften der schwer schmelzbaren Metallsilizide.

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GaAs器件加工中的高温金属化

一幅产生旋风冰川源和…Particular emphasis是打下on the花巧of transient annealing和temperatures合乎时代有1050°C .技术…是为金属成份系统…W…在一些熔岩的金属和硅之间的高温稳定关系进行了研究。特别是Einflusse nichtstationarer Temperung,温度高达1050°C .卢述压缩工艺比较了金属系统Ta、W、TaSix、WSix和VSix的叠层特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...

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