High Performance Thin Films for Microwave Phase Shifter Applications: Device Requirements, Material Design, and Process Science Considerations

M. Cole, W. Nothwang, S. Hirsch, É. Ngo, C. Hubbard, R. Geyer
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引用次数: 4

Abstract

Ba (1-x) Sr x TiO 3 (BST) thin films appear to be excellent candidates for microwave phase shifters. However, the major issue impeding the utilization of BST films in beam steering devices is the simultaneous achievement of the required performance properties. These properties, at frequencies > 10 GHz, include a dielectric permittivity ≤500, low dielectric loss (<2%), high tunability (-2:1), low leakage current characteristics, and low operating control voltages (<10V). Additionally, these properties must be obtained via an industry standard growth and processing methods. Our approach to satisfy the above mentioned dielectric properties of BST based films is focused on material compositional design and optimized film processing parameters. A systematic study was employed to examine the influence of low concentration Mg acceptor doping and optimized post-deposition annealing conditions on the structure and microwave dielectric properties of BST based thin films fabricated via the metalorganic solution deposition technique. The Mg doping was found to have a strong influence on the material properties of the BST films whereby the films permittivity, dissipation factor, and leakage characteristics were significantly reduced with respect to that of undoped BST. Optimum material properties were achieved for the 5 - 7 mol% Mg doped BST films. At these doping concentrations the dissipation factor (10 GHz) for both films was less than 1.7%. The leakage characteristics were 5.78x10 -8 and 7.97x10 -9 , respectively, and the tunability was ∼40%. Our results suggest that Mg doping and optimized post-deposition annealing served to mitigate the oxygen vacancies thereby lowering the films dielectric loss. Furthermore, the acceptor doping maintained the dielectric permittivity well below 500. Our results suggest the 5-7 mol% Mg doped BST thin films to be commercially viable for microwave phase shifter devices.
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用于微波移相器应用的高性能薄膜:器件要求,材料设计和工艺科学考虑
Ba (1-x) Sr x tio3 (BST)薄膜是微波移相器的理想候选材料。然而,阻碍BST薄膜在光束转向装置中应用的主要问题是同时实现所需的性能特性。这些特性,在频率> 10 GHz时,包括介电常数≤500,低介电损耗(<2%),高可调性(-2:1),低漏电流特性和低工作控制电压(<10V)。此外,这些特性必须通过行业标准的生长和加工方法获得。为了满足BST基薄膜的上述介电性能,我们的方法主要集中在材料成分设计和薄膜加工参数的优化上。系统研究了低浓度Mg受体掺杂和优化的沉积后退火条件对金属有机溶液沉积技术制备的BST基薄膜结构和微波介电性能的影响。Mg掺杂对BST薄膜的材料性能有很大的影响,相对于未掺杂的BST,薄膜的介电常数、耗散系数和泄漏特性显著降低。在5 ~ 7mol % Mg掺杂的BST薄膜中获得了最佳的材料性能。在这些掺杂浓度下,两种薄膜的耗散系数(10 GHz)均小于1.7%。泄漏特性分别为5.78x10 -8和7.97x10 -9,可调性为~ 40%。我们的研究结果表明,Mg掺杂和优化的沉积后退火有助于减少氧空位,从而降低薄膜的介电损耗。此外,受体掺杂使介电常数保持在500以下。我们的研究结果表明,5- 7mol % Mg掺杂的BST薄膜用于微波移相器器件具有商业可行性。
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