Synthesis and Characterization of Deposited NiO Thin Films by Spray Pyrolysis Technique

C. Zaouche, Y. Aoun, S. Benramache, A. Gahtar
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引用次数: 3

Abstract

Abstract In this work, nickel oxide was fabricated on glass substrate at 450 °C by spray pyrolysis technique. The NiO layers were obtained with 0.05M molarity, which were deposited by various deposition rates 20, 40, 60 and 80 ml. The effects of deposition rate on the structural, electrical and optical properties were examined. All fabricated NiO thin films were observed a nanocrystalline a cubic structure with a strong (111) preferred orientation, it is only phase was observed in all deposited NiO. The film elaborated with 60 ml have a minimum value of crystallite size was 15.8 nm. All NiO thin films have an average transmittance is about 70 % in the visible region. The NiO thin films have a verity in the band gap energy from 3.34 to 3.51 eV because the effect of deposition, the minimum value was found at 80 ml, this condition have a lowest Urbach energy. The NiO thin films have an electrical resistivity was decreased from 0.625 to 0.152 (Ω.cm) with increasing the deposition rate from 20 to 80ml. The best results of NiO thin films are obtained in the deposition NiO films by 40 and 80 ml.
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喷雾热解沉积NiO薄膜的合成与表征
摘要在450℃的高温下,采用喷雾热解技术在玻璃基板上制备氧化镍。采用20、40、60、80 ml不同的沉积速率制备了质量浓度为0.05M的NiO薄膜,考察了沉积速率对NiO薄膜结构、电学和光学性能的影响。所制备的NiO薄膜均为具有强(111)择优取向的立方纳米晶结构,在所有沉积的NiO中均观察到其唯一相。用60 ml制备的膜的最小结晶尺寸为15.8 nm。所有NiO薄膜在可见光区的平均透过率约为70%。由于沉积的影响,NiO薄膜的带隙能在3.34 ~ 3.51 eV之间变化,在80 ml时发现最小值,此条件下的乌尔巴赫能最低。随着沉积速率从20 ~ 80ml增加,NiO薄膜的电阻率从0.625降低到0.152 (Ω.cm)。以40ml和80ml沉积NiO薄膜效果最好。
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审稿时长
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