Peculiarity of the low temperature magnetoresistive effect in the Corbino disk with magnetic ordering

V. I. Halauchuk, Michail G. Lukashevich
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Abstract

The transverse magnetoresistance (MR) hysteresis loops of a magnetically ordered Corbino disk have been studied in the temperature range 300–2 K in an external magnetic field with induction up to 1 T oriented in the plane of the disk (ϕ = 0°) and perpendicularly to its plane (ϕ = 90°). The Corbino disk is made of a thin permalloy film obtained on an insulating sitall substrate by ion-beam sputtering. Independently of the temperature and measurement geometry, the field dependences of MR in the range of weak magnetic fields up to the magnetisation saturation exhibit sharp peaks of the negative MR caused by the domain walls motion during the magnetisation reversal of the sample. The position of the peak in the magnetic field (Bp) is determined by the temperature as well as the angle between magnetic field direction and the disk plane. It was found that a temperature change in the range of T = 300–2 K leads to a change in its position in the range of 0.2–6.0 mT and 8–22 mT at ϕ = 0° and ϕ = 90°, respectively. The magnetic field direction reorientation from in-plane to out-of-pane at T = 2 K leads to the Bp change from 6 to 22 mT. In the range of strong magnetic fields above the magnetization saturation field at ϕ = 0° the positive MR component decreases with induction and has a linear non-saturable dependence down to T ≈ 40–50 K due to the magnon MR component dominance. The complete freezing of magnons at T = 2 K leads to the absence of high-field magnetoresistive effect. At ϕ = 90° in weak fields, the MR changes its sign from positive to negative due to the anisotropic MR component dominance because of the disk magnetisation reorientation perpendicular to the current lines. In a strong field it changes the slope due to the saturation of negative anisotropic MR component, as well as possible additional contribution of the positive geometric Lorentzian MR.
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具有磁有序的科比诺盘低温磁阻效应的特性
在300-2 K的温度范围内,研究了磁有序Corbino磁盘的横向磁阻(MR)磁滞回线,其感应强度高达1 T,取向于磁盘平面(ϕ = 0°)并垂直于其平面(ϕ = 90°)。Corbino盘是由离子束溅射在绝缘基板上获得的薄坡莫合金薄膜制成的。独立于温度和测量几何形状,在弱磁场范围内,直到磁化饱和,磁流变率的场依赖性表现出由样品磁化反转期间畴壁运动引起的负磁流变率的尖锐峰值。峰值在磁场中的位置(Bp)由温度以及磁场方向与磁盘平面的夹角决定。在φ = 0°和φ = 90°处,温度在T = 300-2 K范围内的变化导致其位置分别在0.2-6.0 mT和8-22 mT范围内发生变化。在T = 2 K处,磁场方向从面内转向面外,导致Bp从6 mT变化到22 mT。在φ = 0°磁化饱和场以上的强磁场范围内,由于磁振子MR分量占主导地位,正MR分量随感应而减小,并且线性不饱和依赖于T≈40-50 K。在T = 2k时,磁振子完全冻结,导致没有高场磁阻效应。在弱场中ϕ = 90°时,由于磁盘磁化重新定向垂直于电流线,磁振子的各向异性磁振子分量占主导地位,磁振子的符号从正变为负。在强磁场中,由于负各向异性磁流变分量的饱和,以及正几何洛伦兹磁流变分量可能的额外贡献,使得斜率发生变化。
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